Cadmium Sulfide
CdS

Crystal properties

Orientation

Size

Polish

(0,0,0,1)

10*10*1mm3

Both sides

(1,1,-2,0)

10*10*1mm3

Both sides

(1,-1,0,0)

10*10*1mm3

Both sides

Growth method

Seeded Vapor-Phase Free Growth Technology

Structure

hexagonal

Lattice Parameters

a = 4.1369Å 
c = 6.7161Å

Growth Direction

<0001>

Standard orientations

(0,0,0,1) (1,1,-2,0) (1,-1,0,0) (1,1,-2,0)

is widely used as substrate for epitaxial growth.

Specific Resistivity

1... 1 x 1010 Ohm cm

Hall Mobility

650(e) cm2/ V x sec

EPD

< 5 x 105/cm2

Polishing

one side or both sides mechanically polished
If you wish to use these substrates for epitaxial growth, 
it is necessary to do chemical treating before epi-growth at your side.

Standard size

10 x 10 x 1 mm3

Max ingot diameter

40mm