Gallium Arsenide
Semi-Insulating ( VB )

Growth method

Vertical Bridgman

Dopant

Undoped

Orientation

(100); and off oriented

Wafer Diameter

2.000 ± 0.015

3.000 ± 0.025 inches

Wafer Thickness

500 ± 25

625 ± 25 microns

Surface

Polished both sides

Surface Flatness

£ 2 microns/Inch of Diameter

Etch Pit Density

< 10,000 / cm² 
< 5,000 / cm²

Mobility

³ 4,000 cm² / v-sec.

Resistivity

³ 1 x 10ohm – cm, after thermal anneal