Growth method
Vertical Bridgman
Dopant
Undoped
Orientation
(100); and off oriented
Wafer Diameter
2.000 ± 0.015
3.000 ± 0.025 inches
Wafer Thickness
500 ± 25
625 ± 25 microns
Surface
Polished both sides
Surface Flatness
£ 2 microns/Inch of Diameter
Etch Pit Density
< 10,000 / cm² < 5,000 / cm²
Mobility
³ 4,000 cm² / v-sec.
Resistivity
³ 1 x 107 ohm – cm, after thermal anneal