Gallium Arsenide, Semi-Conducting ( HB/VB )

Growth method Horizontal Brigman and Vertical Bridgman Gallium Arsenide, Semi-Conducting HB/VB, SurfaceNet GmbH Germany
Conductivity N or P type
Orientation (100), and off oriented ± .5 degree
Other orientations and tolerance
to ± .1 degree available on request
Wafer Diameter 2.000 ± 0.015
3.000 ± 0.025 inches
Other diameters available on request
Wafer Thickness 400 ± 25
500 ± 25 microns
Other thicknesses to 250 microns available on request
 
Rectangular
Wafer Sizes
25 mm x 45 mm (+0, - 1 mm)
38 mm x 45 mm (+0, - 1 mm)
45 mm x 45 mm (+0, - 1 mm)
52 mm x 57 mm (+0.6, - 0.4 mm)
All rectangular wafers sized with (110) cleavage plane parallel to wafer sides.
 
Surface As Cut*
Polished one side etched back side
Polished both sides
 
Etch Pit
Density Ranges
£ 2,000
£ 5,000
£ 10,000
> 10,000 cm-²
 
Carrier Concentration N = 5 x 1016 – 4 x 1018 cm-³
P = 6 x 1017 – 3 x 1019 cm-³
 
Mobility N = 1,200 – 2.400 cm² / v-sec
P = 40 – 100 cm² / v-sec
 
Resistivity N = 1.1 – 15.0 x 10-³ ohm-cm
P = 0.8 – 12.0 x 10-² ohm-cm