Gallium Phosphide ( LEC ) n-type ( GaP:S, GaP:Te )

Orientation <100> ± 20' Gallium
  <111> ± 20'
  4 ÷ 6° off <100> towards <110>
Diameter 51 ± 0,5 mm
Thickness 375 ± 20 mm
  400 ± 20 mm Gallium
Dislocation density (EPD) < 1*105 cm-2
Carrier concentration 3,5*1017 ÷ 2*1018 cm-3
Dopant S or Te Galium Phosphide VGF crystal
 Graphik
GaP Wafers              
Diam. Type Orient. C.C. EPD Thickness Surface Grade
2" P/Zn (100) 1-2x10E18 1-2x10E5 300 mic. 2-SIDE EPI
2" Undoped (100) <1x10E16 <2x10E5 300 mic. 2-SIDE EPI
2" N/S (100) 1-2x10E18 <2x10E5 300 mic. 2-SIDE EPI
2" Optical Undoped (100) <1x10E16   300 mic. 2-SIDE EPI
2" Electronic Undoped (100) <1x10E16   300 mic. 2-SIDE EPI
2" Optical Undoped (100) <1x10E16   300 mic. 2-SIDE EPI