Gallium Phosphide ( LEC )
n-type ( GaP:S, GaP:Te )

Chart

Orientation

 <100> ± 20'  

 

 

<111> ± 20'  

 

 

 4 ÷ 6° off <100> towards <110> 

 

Diameter 

51 ± 0,5 mm 

 

Thickness  

375 ± 20 mm 

 

 

400 ± 20 mm 

 

Dislocation  density (EPD) 

< 1*105 cm-2 

 

Carrier  concentration 

3,5*1017 ÷ 2*1018 cm-3

 

Dopant 

S or Te 

Galium Phosphide VGF crystal

GaP Wafers

Diam.

Type

Orient.

C.C.

EPD

Thickness

Surface

Grade

2"

P/Zn

(100)

1-2x10E18

1-2x10E5

300 mic.

2-SIDE

EPI

2"

Undoped

(100)

<1x10E16

<2x10E5

300 mic.

2-SIDE

EPI

2"

N/S

(100)

1-2x10E18

<2x10E5

300 mic.

2-SIDE

EPI

2" Optical

Undoped

(100)

<1x10E16

 

300 mic.

2-SIDE

EPI

2" Electronic

Undoped

(100)

<1x10E16

 

300 mic.

2-SIDE

EPI

2" Optical

Undoped

(100)

<1x10E16

 

300 mic.

2-SIDE

EPI