Indium Antimonide
InSb

Crystal properties

Orientation

(100) +/- 0.5°

 

Type

N-type

 

Undoped

Carrier concentration

(4-6) x 1014/cm3 at 77K

EPD

< 200 /cm2

 

50.8 mm ΦF x 450 μmT

Polish

One side B-face EPI polished, back side Lapped and Etched

Orientation Flat

(0,1,-1) +/- 1°

InSb Wafers

Diam.

Type

Orien.

C.C.

EPD

Thickness

Surface

Grade

2"

N/Undoped

(100)

4-7x10E14

<200

450 mic.

2-SIDE

EPI

2"

N/Undoped

(111)A

4-x10E14

<200

450 mic.

2-SIDE

EPI

2"

N/Te

(100)

3-5x10E17

<200

450 mic.

1-SIDE

EPI