Indium Antimonide
InSb
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Crystal properties |
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Orientation |
(100) +/- 0.5° |
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Type |
N-type |
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Undoped |
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Carrier concentration |
(4-6) x 1014/cm3 at 77K |
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EPD |
< 200 /cm2 |
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50.8 mm ΦF x 450 μmT |
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Polish |
One side B-face EPI polished, back side Lapped and Etched |
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Orientation Flat |
(0,1,-1) +/- 1° |
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InSb Wafers |
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Diam. |
Type |
Orien. |
C.C. |
EPD |
Thickness |
Surface |
Grade |
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2" |
N/Undoped |
(100) |
4-7x10E14 |
<200 |
450 mic. |
2-SIDE |
EPI |
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2" |
N/Undoped |
(111)A |
4-x10E14 |
<200 |
450 mic. |
2-SIDE |
EPI |
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2" |
N/Te |
(100) |
3-5x10E17 |
<200 |
450 mic. |
1-SIDE |
EPI |
