Indium Arsenide ( InAs )

Crystal properties    
Orientation (100) (110) (111) +/- 0.5°
with orientation flat
 
Crystal structure zinc blende  
Lattice constant 6.058 Å  
Growth method LEC  
Dopant None  
Type N-type  
Carrier concentration < 3E16 / cm3  
Mobility > 2E4 cm2 / VS  
EPD < 5E4 / cm2  
Melting Point 1215°C  
Density 5.66 g/cm3  
Size 30 mmΦF X 500 +/- 20 μmT wafer  
Polish one side EPI polished  
InAs Wafers              
Diam. Type Orient. C.C. EPD Thickness Surface Grade
2" Zn/P (100)     450 mic. 1-SIDE EPI
2" Zn/P (100)     450 mic. 1-SIDE EPI
2" S/N (100)     450 mic. 1-SIDE EPI