Indium Arsenide
InAs

Crystal properties

Orientation

(100) (110) (111) +/- 0.5° 
with orientation flat

 

Crystal structure

zinc blende

 

Lattice constant

6.058 Å

 

Growth method

LEC

 

Dopant

None

 

Type

N-type

 

Carrier concentration

< 3E16 / cm3

 

Mobility

> 2E4 cm2 / VS

 

EPD

< 5E4 / cm2

 

Melting Point

1215°C

 

Density

5.66 g/cm3

 

Size

30 mmΦF X 500 +/- 20 μmT wafer

 

Polish

one side EPI polished

 

InAs Wafers

Diam.

Type

Orient.

C.C.

EPD

Thickness

Surface

Grade

2"

Zn/P

(100)

 

 

450 mic.

1-SIDE

EPI

2"

Zn/P

(100)

 

 

450 mic.

1-SIDE

EPI

2"

S/N

(100)

 

 

450 mic.

1-SIDE

EPI