Indium Phosphide
InP
Crystal properties |
|
Crystal Type |
cubic, a = 5.868A |
Orientation |
(100) |
Growth method |
LEC |
Resistivity |
0.03-0.2 Ohm cm |
Type |
N-type |
|
Undoped |
Mobility |
3700 - 4000 cm2/ V-S |
EPD |
< 5 x 1014 /cm2 |
Carrier concentration |
< = 1017 / cm3 |
Melting Point |
1330°C |
Size |
10 X 10 X 0.5mm3 |
Polish |
1 side or 2 side |
Orientation |
(111) |
Growth method |
LEC |
Type |
N-type |
|
Undoped |
Mobility |
< 3000 cm2/ V-S |
Carrier concentration |
< 3 X 1016 / cm3 |
Size |
10 X 10 X 0.5mm3 |
Polish |
1 side, B-face |
|
|
InP Wafers |
|||||||
Diam. |
Type |
Orient. |
C.C. |
EPD |
Thickness |
Surface |
Grade |
2" |
Fe/SI |
(100) |
R>10E7 |
<10E5 |
500 mic. |
1-SIDE |
EPI |
2" |
Fe/SI |
(100) |
R>10E7 |
<10E5 |
500 mic. |
2-SIDE |
EPI |
2" |
S/N |
(100) |
R>10E18 |
<10E5 |
450 mic. |
1-SIDE |
EPI |