Indium Phosphide
InP

Crystal properties

Crystal Type

cubic, a = 5.868A

Orientation

(100)

Growth method

LEC

Resistivity

0.03-0.2 Ohm cm

Type

N-type

 

Undoped

Mobility

3700 - 4000 cm2/ V-S

EPD

< 5 x 1014 /cm2

Carrier concentration

< = 1017 / cm3

Melting Point

1330°C

Size

10 X 10 X 0.5mm3

Polish

1 side or 2 side

Orientation

(111)

Growth method

LEC

Type

N-type

 

Undoped

Mobility

< 3000 cm2/ V-S

Carrier concentration

< 3 X 1016 / cm3

Size

10 X 10 X 0.5mm3

Polish

1 side, B-face

 

 

InP Wafers

Diam.

Type

Orient.

C.C.

EPD

Thickness

Surface

Grade

2"

Fe/SI

(100)

R>10E7

<10E5

500 mic.

1-SIDE

EPI

2"

Fe/SI

(100)

R>10E7

<10E5

500 mic.

2-SIDE

EPI

2"

S/N

(100)

R>10E18

<10E5

450 mic.

1-SIDE

EPI